Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STD6N65M2 Power Field Effect Transistor, MOSFET, N-channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V34305+$4.993725+$4.623850+$4.3648100+$4.2539500+$4.17992500+$4.08745000+$4.050410000+$3.9949 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPD07N60C3ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V74015+$3.865125+$3.578850+$3.3783100+$3.2925500+$3.23522500+$3.16365000+$3.135010000+$3.0920 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHB6N65E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V545110+$10.0464100+$9.5441500+$9.20921000+$9.19252000+$9.12555000+$9.04187500+$8.974810000+$8.9413 -
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Category: Medium high voltage MOS transistorDescription: N Channel MOSFET, E-series, low quality factor, Vishay Semiconductor Vishay E-series MOSFET power supply is a high-voltage transistor with ultra-low maximum on resistance, low sensitivity value, and fast switching function. They provide various current ratings. Typical applications include servers and telecommunications power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS). ###Features: Low sensitivity value (FOM) RDS (on) x Qg, low input capacitance (Ciss), low on resistance (RDS (on)), ultra-low gate charge (Qg), fast switching, reduced switching and conduction losses # # MOSFET transistor, Vishay Semiconductor962510+$11.6424100+$11.0603500+$10.67221000+$10.65282000+$10.57525000+$10.47827500+$10.400510000+$10.3617 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHB12N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 12A, TO-263-3788610+$7.0980100+$6.7431500+$6.50651000+$6.49472000+$6.44745000+$6.38827500+$6.340910000+$6.3172 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPD60R450E6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V278110+$7.9716100+$7.5730500+$7.30731000+$7.29402000+$7.24095000+$7.17447500+$7.121310000+$7.0947 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPD65R225C7ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V363710+$8.6196100+$8.1886500+$7.90131000+$7.88692000+$7.82955000+$7.75767500+$7.700210000+$7.6714 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQD1N60CTM Power Field Effect Transistor, MOSFET, N-channel, 1A, 600 V, 9.3 ohm, 10 V, 2 V56405+$2.756725+$2.552550+$2.4096100+$2.3483500+$2.30752500+$2.25645000+$2.236010000+$2.2054 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPD60R950C6ATMA1 Power Field Effect Transistor, MOSFET, N-channel, 5.7 A, 650 V, 0.68 ohm, 10 V, 3 V99995+$3.326425+$3.080050+$2.9075100+$2.8336500+$2.78432500+$2.72275000+$2.698110000+$2.6611 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQD1N80TM Power Field Effect Transistor, MOSFET, N-channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V5249 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPD02N60C3BTMA1 功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V3707
